2024
12-12
Device and method for single-sided polis...
The device and method for single-sided polishing of wafers mainly involve the field of semiconductor equipment technology. The following is a detailed introduction to it:1、 Single sided polishing device for wafersThe single-sided polishing ...
2024
12-10
What are the methods to control the flat...
The methods for controlling the flatness of double-sided polishing of 12 inch recycled wafers mainly include the following:1、 Adopting advanced polishing equipment and technologyDouble sided polishing equipment:Using double-sided polishing ...
2024
12-06
What are the process improvement methods...
The process improvement methods based on quartz glass epitaxial GaN mainly include the following aspects:1、 Optimization of wafer preparationMultiple thinning treatments:By using slurries and grinding discs of different materials to perform...
2024
12-06
What methods are available to remove waf...
The methods for removing edge defects in wafer bonding mainly include the following:1、 Chemical vapor deposition and planarization processMethod Overview:Provide wafers to be bonded.By using chemical vapor deposition, a layer of oxide film ...
2024
12-05
What are the effects of abrasive morphol...
The morphology and dispersion medium of abrasives have a significant impact on the grinding quality of 4H silicon carbide (4H SiC) chips. The following is a detailed analysis of this impact:1、 The influence of abrasive morphologyThe morphol...
2024
11-21
Poor flatness of the bonding surface bet...
When the flatness of the bonding surface between the bottom of the IGBT package and the heat sink is poor, a series of adverse effects will occur:Reduced contact area: Poor flatness of the bonding surface leads to a decrease in the contact ...